Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer

Journal Article · Mon Jul 28 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4891852· OSTI ID:22311199

Wu, Wei; Cao, Yanyan; Caspar, Jonathan V.; Guo, Qijie; Johnson, Lynda K.; Mclean, Robert S.; Malajovich, Irina; Choudhury, Kaushik Roy ^[1]

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1. DuPont Central Research and Development, Wilmington, Delaware 19880 (United States)

We describe a CZTSSe (Cu{sub 2}ZnSn(S{sub 1−x},Se{sub x}){sub 4}) photovoltaic (PV) device with an ALD (atomic layer deposition) coated buffer dielectric layer for CZTSSe surface passivation. An ALD buffer layer, such as TiO{sub 2}, can be applied in order to reduce the interface recombination and improve the device's open-circuit voltage. Detailed characterization data including current-voltage, admittance spectroscopy, and capacitance profiling are presented in order to compare the performance of PV devices with and without the ALD layer.

• OSTI ID: 22311199
• Journal Information: Applied Physics Letters, Vol. 105, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BUFFERS
CAPACITANCE
COPPER COMPOUNDS
CURRENTS
DEPOSITION
DIELECTRIC MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
INTERFACES
LAYERS
PASSIVATION
PHOTOVOLTAIC EFFECT
RECOMBINATION
SELENIUM COMPOUNDS
SPECTROSCOPY
SULFUR COMPOUNDS
SURFACES
TIN COMPOUNDS
TITANIUM OXIDES
ZINC COMPOUNDS