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Title: Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer

Abstract

We describe a CZTSSe (Cu{sub 2}ZnSn(S{sub 1−x},Se{sub x}){sub 4}) photovoltaic (PV) device with an ALD (atomic layer deposition) coated buffer dielectric layer for CZTSSe surface passivation. An ALD buffer layer, such as TiO{sub 2}, can be applied in order to reduce the interface recombination and improve the device's open-circuit voltage. Detailed characterization data including current-voltage, admittance spectroscopy, and capacitance profiling are presented in order to compare the performance of PV devices with and without the ALD layer.

Authors:
; ; ; ; ; ; ;  [1]
  1. DuPont Central Research and Development, Wilmington, Delaware 19880 (United States)
Publication Date:
OSTI Identifier:
22311199
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BUFFERS; CAPACITANCE; COPPER COMPOUNDS; CURRENTS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; INTERFACES; LAYERS; PASSIVATION; PHOTOVOLTAIC EFFECT; RECOMBINATION; SELENIUM COMPOUNDS; SPECTROSCOPY; SULFUR COMPOUNDS; SURFACES; TIN COMPOUNDS; TITANIUM OXIDES; ZINC COMPOUNDS

Citation Formats

Wu, Wei, E-mail: wei.wu@dupont.com, Cao, Yanyan, Caspar, Jonathan V., Guo, Qijie, Johnson, Lynda K., Mclean, Robert S., Malajovich, Irina, and Choudhury, Kaushik Roy. Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer. United States: N. p., 2014. Web. doi:10.1063/1.4891852.
Wu, Wei, E-mail: wei.wu@dupont.com, Cao, Yanyan, Caspar, Jonathan V., Guo, Qijie, Johnson, Lynda K., Mclean, Robert S., Malajovich, Irina, & Choudhury, Kaushik Roy. Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer. United States. doi:10.1063/1.4891852.
Wu, Wei, E-mail: wei.wu@dupont.com, Cao, Yanyan, Caspar, Jonathan V., Guo, Qijie, Johnson, Lynda K., Mclean, Robert S., Malajovich, Irina, and Choudhury, Kaushik Roy. Mon . "Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer". United States. doi:10.1063/1.4891852.
@article{osti_22311199,
title = {Characterization of CZTSSe photovoltaic device with an atomic layer-deposited passivation layer},
author = {Wu, Wei, E-mail: wei.wu@dupont.com and Cao, Yanyan and Caspar, Jonathan V. and Guo, Qijie and Johnson, Lynda K. and Mclean, Robert S. and Malajovich, Irina and Choudhury, Kaushik Roy},
abstractNote = {We describe a CZTSSe (Cu{sub 2}ZnSn(S{sub 1−x},Se{sub x}){sub 4}) photovoltaic (PV) device with an ALD (atomic layer deposition) coated buffer dielectric layer for CZTSSe surface passivation. An ALD buffer layer, such as TiO{sub 2}, can be applied in order to reduce the interface recombination and improve the device's open-circuit voltage. Detailed characterization data including current-voltage, admittance spectroscopy, and capacitance profiling are presented in order to compare the performance of PV devices with and without the ALD layer.},
doi = {10.1063/1.4891852},
journal = {Applied Physics Letters},
number = 4,
volume = 105,
place = {United States},
year = {Mon Jul 28 00:00:00 EDT 2014},
month = {Mon Jul 28 00:00:00 EDT 2014}
}