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Title: Effects of ZrO{sub 2} doping on HfO{sub 2} resistive switching memory characteristics

Abstract

A resistive switching (RS) random access memory device with ZrO{sub 2}-doped HfO{sub 2} exhibits better RS performance than that with pure HfO{sub 2}. In particular, I{sub res}, V{sub res}, and V{sub set} are reduced by approximately 58%, 38%, and 39%, respectively, when HfO{sub 2} is doped with ZrO{sub 2} (9 at. %). In addition, the ZrO{sub 2} doping in HfO{sub 2} makes the distribution of most parameters steeper. Transmission electron microscopy (TEM) analysis reveals that the deposited zirconium-doped hafnium oxide (HZO) (9 at. %) is polycrystalline. Elemental mapping results by scanning TEM–energy dispersive spectroscopy also prove that ZrO{sub 2} is uniformly distributed in the HZO (9 at. %) film. The possible mechanism for the improvement in the RS characteristics is also suggested on the basis of the X-ray photoelectron spectroscopy results and filamentary RS mechanism. These results suggest that the ZrO{sub 2} doping into HfO{sub 2} likely not only will reduce power consumption but also will improve cyclic endurance by controlling the nonstoichiometric phase.

Authors:
; ;  [1];  [2];  [3];  [4]
  1. Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
  2. Department of Electronic Engineering and New Technology Component and Material Research Center (NCMRC), Gachon University, Seongnam-si, Gyeonggi-do 461-741 (Korea, Republic of)
  3. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)
  4. Department of Materials Science and Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22310881
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 105; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DISTRIBUTION; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; FILMS; HAFNIUM OXIDES; MEMORY DEVICES; RANDOMNESS; SWITCHES; TRANSMISSION ELECTRON MICROSCOPY; X-RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM OXIDES

Citation Formats

Ryu, Seung Wook, Kwac, Jungsuk, Nishi, Yoshio, Cho, Seongjae, E-mail: felixcho@gachon.ac.kr, Park, Joonsuk, and Kim, Hyeong Joon. Effects of ZrO{sub 2} doping on HfO{sub 2} resistive switching memory characteristics. United States: N. p., 2014. Web. doi:10.1063/1.4893568.
Ryu, Seung Wook, Kwac, Jungsuk, Nishi, Yoshio, Cho, Seongjae, E-mail: felixcho@gachon.ac.kr, Park, Joonsuk, & Kim, Hyeong Joon. Effects of ZrO{sub 2} doping on HfO{sub 2} resistive switching memory characteristics. United States. doi:10.1063/1.4893568.
Ryu, Seung Wook, Kwac, Jungsuk, Nishi, Yoshio, Cho, Seongjae, E-mail: felixcho@gachon.ac.kr, Park, Joonsuk, and Kim, Hyeong Joon. Mon . "Effects of ZrO{sub 2} doping on HfO{sub 2} resistive switching memory characteristics". United States. doi:10.1063/1.4893568.
@article{osti_22310881,
title = {Effects of ZrO{sub 2} doping on HfO{sub 2} resistive switching memory characteristics},
author = {Ryu, Seung Wook and Kwac, Jungsuk and Nishi, Yoshio and Cho, Seongjae, E-mail: felixcho@gachon.ac.kr and Park, Joonsuk and Kim, Hyeong Joon},
abstractNote = {A resistive switching (RS) random access memory device with ZrO{sub 2}-doped HfO{sub 2} exhibits better RS performance than that with pure HfO{sub 2}. In particular, I{sub res}, V{sub res}, and V{sub set} are reduced by approximately 58%, 38%, and 39%, respectively, when HfO{sub 2} is doped with ZrO{sub 2} (9 at. %). In addition, the ZrO{sub 2} doping in HfO{sub 2} makes the distribution of most parameters steeper. Transmission electron microscopy (TEM) analysis reveals that the deposited zirconium-doped hafnium oxide (HZO) (9 at. %) is polycrystalline. Elemental mapping results by scanning TEM–energy dispersive spectroscopy also prove that ZrO{sub 2} is uniformly distributed in the HZO (9 at. %) film. The possible mechanism for the improvement in the RS characteristics is also suggested on the basis of the X-ray photoelectron spectroscopy results and filamentary RS mechanism. These results suggest that the ZrO{sub 2} doping into HfO{sub 2} likely not only will reduce power consumption but also will improve cyclic endurance by controlling the nonstoichiometric phase.},
doi = {10.1063/1.4893568},
journal = {Applied Physics Letters},
number = 7,
volume = 105,
place = {United States},
year = {Mon Aug 18 00:00:00 EDT 2014},
month = {Mon Aug 18 00:00:00 EDT 2014}
}