Effects of ZrO{sub 2} doping on HfO{sub 2} resistive switching memory characteristics
- Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
- Department of Electronic Engineering and New Technology Component and Material Research Center (NCMRC), Gachon University, Seongnam-si, Gyeonggi-do 461-741 (Korea, Republic of)
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)
- Department of Materials Science and Engineering and Inter-university Semiconductor Research Center (ISRC), Seoul National University, Seoul 151-744 (Korea, Republic of)
A resistive switching (RS) random access memory device with ZrO{sub 2}-doped HfO{sub 2} exhibits better RS performance than that with pure HfO{sub 2}. In particular, I{sub res}, V{sub res}, and V{sub set} are reduced by approximately 58%, 38%, and 39%, respectively, when HfO{sub 2} is doped with ZrO{sub 2} (9 at. %). In addition, the ZrO{sub 2} doping in HfO{sub 2} makes the distribution of most parameters steeper. Transmission electron microscopy (TEM) analysis reveals that the deposited zirconium-doped hafnium oxide (HZO) (9 at. %) is polycrystalline. Elemental mapping results by scanning TEM–energy dispersive spectroscopy also prove that ZrO{sub 2} is uniformly distributed in the HZO (9 at. %) film. The possible mechanism for the improvement in the RS characteristics is also suggested on the basis of the X-ray photoelectron spectroscopy results and filamentary RS mechanism. These results suggest that the ZrO{sub 2} doping into HfO{sub 2} likely not only will reduce power consumption but also will improve cyclic endurance by controlling the nonstoichiometric phase.
- OSTI ID:
- 22310881
- Journal Information:
- Applied Physics Letters, Vol. 105, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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