Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire
- NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)
We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3 meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.
- OSTI ID:
- 22310845
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 105; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Comparison of luminescence properties of bilayer and multilayer InAs/GaAs quantum dots
GaAs/GaP quantum dots: Ensemble of direct and indirect heterostructures with room temperature optical emission