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Title: Thermal stability and thermoelectric properties of Cu{sub x}As{sub 40−x}Te{sub 60−y}Se{sub y} semiconducting glasses

Journal Article · · Journal of Solid State Chemistry
;  [1];  [2]; ; ;  [3]; ;  [4];  [5];  [2];  [1];  [2]
  1. Institut Charles Gerhardt, UMR 5253 CNRS, Université de. Montpellier 2, 34095 Montpellier (France)
  2. Institut de Chimie et des Matériaux Paris-Est, UMR 7182 CNRS UPEC 94320 Thiais (France)
  3. Université de Lorraine, CNRS, Institut Jean Lamour, Parc de Saurupt, F-54042 NANCY Cedex (France)
  4. IST/ITN, Instituto Superior Técnico, Universidade Técnica de Lisboa/CFMCUL, Estrada Nacianal 10, P-2686-953 Sacavém (Portugal)
  5. SPCTS, UMR CNRS 73125, Centre Européen de la Céramique, 87068 Limoges (France)

We report on the thermal behavior and thermoelectric properties of bulk chalcogenide glasses in the systems Cu{sub x}As{sub 40−x}Te{sub 60} (20≤x≤32.5) and Cu{sub x}As{sub 40−x}Te{sub 60−y}Se{sub y}, (0≤y≤9) synthesized by conventional melt-quenching techniques. The thermal stability of these glasses was probed by differential scanning calorimetry to determine the characteristic T{sub g} and ΔT temperatures, both of which increasing noticeably with y. Thermoelectric properties were found to be mainly influenced by the Cu concentration with respect to the Se content. The thermal conductivity is practically composition-independent throughout the compositional range covered. A maximum ZT value of 0.02 at 300 K increasing to 0.06 at 375 K was achieved for the composition Cu{sub 30}As{sub 10}Te{sub 54}Se{sub 6}. - Graphical abstract: Effect of substitution of Te by Se and As by Cu on thermal stability and thermoelectric properties of Cu{sub x}As{sub 40−x}Te{sub 60−y}Se{sub y} semiconducting glasses. - Highlights: • We studied substitution of Te by Se in Cu–As–Te thermoelectric chalcogenide glasses. • Cu–As–Te–Se glasses were prepared by conventional melt-quenching method. • Se inclusion increases thermal stability in Cu–As–Te glasses. • Increasing copper concentration enhances thermoelectric properties. • ZT of 0.02 was achieved at 300 K and 0.06 at 375 K.

OSTI ID:
22309039
Journal Information:
Journal of Solid State Chemistry, Vol. 203; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
Country of Publication:
United States
Language:
English