An atomic layer deposition chamber for in situ x-ray diffraction and scattering analysis

Journal Article · Thu May 15 00:00:00 EDT 2014 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.4876484· OSTI ID:22308856

Geyer, Scott M.; Methaapanon, Rungthiwa; Kim, Woo-Hee; Johnson, Richard W. ^[1]; Van Campen, Douglas G.; Metha, Apurva ^[2]

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1. Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)
2. SLAC National Accelerator Laboratory, Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States)

The crystal structure of thin films grown by atomic layer deposition (ALD) will determine important performance properties such as conductivity, breakdown voltage, and catalytic activity. We report the design of an atomic layer deposition chamber for in situ x-ray analysis that can be used to monitor changes to the crystal structural during ALD. The application of the chamber is demonstrated for Pt ALD on amorphous SiO{sub 2} and SrTiO{sub 3} (001) using synchrotron-based high resolution x-ray diffraction, grazing incidence x-ray diffraction, and grazing incidence small angle scattering.

• OSTI ID: 22308856
• Journal Information: Review of Scientific Instruments, Vol. 85, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DEPOSITION
INCIDENCE ANGLE
RESOLUTION
SILICON OXIDES
SMALL ANGLE SCATTERING
STRONTIUM TITANATES
THIN FILMS
X-RAY DIFFRACTION