Argon-ion-induced formation of nanoporous GaSb layer: Microstructure, infrared luminescence, and vibrational properties

Journal Article · Mon Jul 21 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4890608· OSTI ID:22308466

Datta, D. P.; Kanjilal, A. ^[1]; Satpati, B. ^[2]; Dhara, S. ^[3]; Das, T. D. ^[4]; Kanjilal, D. ^[5]

---

1. Department of Physics, Shiv Nadar University, Uttar Pradesh 201 314 (India)
2. Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India)
3. Surface and Nanoscience Division, Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102 (India)
4. Department of Electronic Science, University of Calcutta, APC Road, Kolkata 700 009 (India)
5. Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)

Room temperature implantation of 60 keV Ar{sup +}-ions in GaSb to the fluences of 7 × 10{sup 16} to 3 × 10{sup 18} ions cm{sup −2} is carried out at two incidence angles, viz 0° and 60°, leading to formation of a nanoporous layer. As the ion fluence increases, patches grow on the porous layer under normal ion implantation, whereas the porous layer gradually becomes embedded under a rough top surface for oblique incidence of ions. Grazing incidence x-ray diffraction and cross-sectional transmission electron microscopy studies reveal the existence of nanocrystallites embedded in the ion-beam amorphized GaSb matrix up to the highest fluence used in our experiment. Oxidation of the nanoporous layers becomes obvious from x-ray photoelectron spectroscopy and Raman mapping. The correlation of ion-beam induced structural modification with photoluminescence signals in the infrared region has further been studied, showing defect induced emission of additional peaks near the band edge of GaSb.

• OSTI ID: 22308466
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARGON IONS
CORRELATIONS
DEFECTS
GALLIUM ANTIMONIDES
INCIDENCE ANGLE
ION IMPLANTATION
KEV RANGE 10-100
LAYERS
MICROSTRUCTURE
MODIFICATIONS
PHOTOLUMINESCENCE
POROUS MATERIALS
RAMAN EFFECT
SURFACES
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY