Low energy electron emission from surface-interface states of SiO{sub 2}:Ge films

Journal Article · Tue Oct 21 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4900475· OSTI ID:22308116

Fitting, H. -J. ^[1]; Schmidt, B. ^[2]

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1. Institute of Physics, University of Rostock, Universitatsplatz 3, D-18051 Rostock (Germany)
2. Research Center Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, D-01314 Dresden (Germany)

In this paper we present the results of optically stimulated electron emission (OSEE) investigation of thin SiO{sub 2} films implanted with Ge{sup +} ions. The emission models of Urbach rule and power Kane-dependence are used to fit OSEE spectra at different excitation energy ranges. The materials under study may find a number of technological applications in optical devices and ultraviolet sensors. Samples attestation was performed by electron microscopy and x-ray photoelectron spectroscopy (XPS). XPS data revealed strong dependence between the Si, Ge and O atoms state and annealing time. Observed correlations between parameter values of Urbach- and Kane-related models suggest the implantation-induced changeover of both the vibronic subsystem and energy band structure.

• OSTI ID: 22308116
• Journal Information: AIP Conference Proceedings, Vol. 1624, Issue 1; Conference: SIO2014: 10. international symposium on SiO2, advanced dielectrics and related devices, Cagliari (Italy), 16-18 Jun 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CORRELATIONS
ELECTRON EMISSION
ELECTRON MICROSCOPY
ELECTRONIC STRUCTURE
EMISSION SPECTRA
EXCITATION
GERMANIUM IONS
INTERFACES
ION IMPLANTATION
SENSORS
SILICON OXIDES
SURFACES
ULTRAVIOLET RADIATION
X-RAY PHOTOELECTRON SPECTROSCOPY