Studies on optoelectronic properties of DC reactive magnetron sputtered chromium doped CdO thin films

Journal Article · Wed Oct 15 04:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4898222· OSTI ID:22308046

Cr doped CdO thin films were deposited on glass substrates by DC reactive magnetron sputtering method and subsequently annealed from 200 °C to 500 °C. X-ray diffraction analysis showed that the films exhibit (1 1 1) preferred orientation. The optical transmittance of the films increases from 64% to 88% with increasing annealing temperature. The optical band gap values were found to be decreased from 2.77 to 2.65 eV with the increase of annealing temperature. The decrease in optical band gap energy with increasing annealing temperature can be attributed to improvement in the crystallinity of the films and may also be due to quantum confinement effect. A minimum resistivity of 2.23 × 10{sup −4} Ω.cm and sheet resistance of 6.3 Ω/sq is obtained for Cr doped CdO film annealed at 500 °C.

• OSTI ID: 22308046
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1620; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CADMIUM OXIDES
CHROMIUM COMPOUNDS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
EV RANGE
GLASS
GRAIN ORIENTATION
OPACITY
SPUTTERING
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS
X-RAY DIFFRACTION