Studies on nickel-tungsten oxide thin films

Journal Article · Wed Oct 15 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4898241· OSTI ID:22308006

Usha, K. S. ^[1]; Sanjeeviraja, C. ^[2]

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1. Department of Physics, Alagappa University, Karaikudi - 630 004 (India)
2. Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi - 630 004 (India)

Nickel-Tungsten oxide (95:5) thin films were prepared by rf sputtering at 200W rf power with various substrate temperatures. X-ray diffraction study reveals the amorphous nature of films. The substrate temperature induced decrease in energy band gap with a maximum transmittance of 71%1 was observed. The Micro-Raman study shows broad peaks at 560 cm{sup −1} and 1100 cm{sup −1} correspond to Ni-O vibration and the peak at 860 cm{sup −1} can be assigned to the vibration of W-O-W bond. Photoluminescence spectra show two peaks centered on 420 nm and 485 nm corresponding to the band edge emission and vacancies created due to the addition of tungsten, respectively.

• OSTI ID: 22308006
• Journal Information: AIP Conference Proceedings, Vol. 1620, Issue 1; Conference: Optics 14: International conference on optics: Light and its interactions with matter, Calicut, Kerala (India), 19-21 Mar 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
EMISSION SPECTRA
ENERGY GAP
NICKEL
NICKEL TUNGSTATES
PHOTOLUMINESCENCE
RAMAN SPECTRA
SPUTTERING
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS
TUNGSTEN
VACANCIES
X-RAY DIFFRACTION