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Title: Synthesis, structure and electrical properties of a new tin vanadium selenide

Journal Article · · Journal of Solid State Chemistry
 [1];  [2];  [1];  [3];  [3];  [1];  [4]
  1. Department of Chemistry and Materials Science Institute, University of Oregon, Eugene, OR 97403 (United States)
  2. Institut Laue-Langevin (ILL), F-38042 Grenoble (France)
  3. Novel Materials, Humboldt-Universität zu Berlin, Newtonstr. 15, 12489 Berlin (Germany)
  4. Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439 (United States)

The turbostratically disordered misfit layer compound (SnSe){sub 1.15}VSe{sub 2} was synthesized and structurally characterized. Electrical transport measurements suggest this compound undergoes a charge or spin density wave (CDW or SDW) transition, which has not been observed in previous misfit layer compounds. The (SnSe){sub 1.15}VSe{sub 2} compound, created through the modulated elemental reactants technique, contains highly oriented intergrowths of SnSe bilayers and VSe{sub 2} structured Se–V–Se trilayers with abrupt interfaces between them perpendicular to the c-axis. X-ray diffraction data and transmission electron microscope images show that each constituent has in-plane crystallinity but that there is a random rotational disorder between the constituent layers. Temperature-dependent electrical resistivity data and Hall measurements are consistent with (SnSe){sub 1.15}VSe{sub 2} being a metal, however an abrupt increase in the resistivity occurs between 30 and 100 K. The carrier concentration decreases by approximately 1 carrier per vanadium atom during this temperature interval. - Graphical abstract: Turbostratically disordered (SnSe){sub 1.15}VSe{sub 2}. - Highlights: • New compound (SnSe){sub 1.15}VSe{sub 2}. • Turbostratic disorder. • Charge density wave at 100 K.

OSTI ID:
22306324
Journal Information:
Journal of Solid State Chemistry, Vol. 202; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
Country of Publication:
United States
Language:
English