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Title: Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN(101⁻1) and GaN(202⁻1) surfaces

Abstract

Polarity of semipolar GaN(101⁻1) (101⁻1⁻) and GaN(202⁻1) (202⁻1⁻) surfaces was determined with X-ray photoelectron diffraction (XPD) using a standard MgKα source. The photoelectron emission from N 1s core level measured in the a-plane of the crystals shows significant differences for the two crystal orientations within the polar angle range of 80–100° from the (0001) normal. It was demonstrated that XPD polar plots recorded in the a-plane are similar for each polarity of the GaN(101⁻1) and GaN(202⁻1) crystals if referred to (0001) crystal axes. For polarity determinations of all important GaN(h0h⁻l) semipolar surfaces, the above given polar angle range is suitable.

Authors:
; ;  [1];  [2]
  1. Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnická 10, 162 53 Prague (Czech Republic)
  2. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27606 (United States)
Publication Date:
OSTI Identifier:
22305976
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 116; Journal Issue: 10; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTALS; ELECTRON DIFFRACTION; GALLIUM NITRIDES; ORIENTATION; SURFACES; X RADIATION; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Romanyuk, O., E-mail: romanyuk@fzu.cz, Jiříček, P., Bartoš, I., and Paskova, T.. Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN(101⁻1) and GaN(202⁻1) surfaces. United States: N. p., 2014. Web. doi:10.1063/1.4894708.
Romanyuk, O., E-mail: romanyuk@fzu.cz, Jiříček, P., Bartoš, I., & Paskova, T.. Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN(101⁻1) and GaN(202⁻1) surfaces. United States. doi:10.1063/1.4894708.
Romanyuk, O., E-mail: romanyuk@fzu.cz, Jiříček, P., Bartoš, I., and Paskova, T.. 2014. "Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN(101⁻1) and GaN(202⁻1) surfaces". United States. doi:10.1063/1.4894708.
@article{osti_22305976,
title = {Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN(101⁻1) and GaN(202⁻1) surfaces},
author = {Romanyuk, O., E-mail: romanyuk@fzu.cz and Jiříček, P. and Bartoš, I. and Paskova, T.},
abstractNote = {Polarity of semipolar GaN(101⁻1) (101⁻1⁻) and GaN(202⁻1) (202⁻1⁻) surfaces was determined with X-ray photoelectron diffraction (XPD) using a standard MgKα source. The photoelectron emission from N 1s core level measured in the a-plane of the crystals shows significant differences for the two crystal orientations within the polar angle range of 80–100° from the (0001) normal. It was demonstrated that XPD polar plots recorded in the a-plane are similar for each polarity of the GaN(101⁻1) and GaN(202⁻1) crystals if referred to (0001) crystal axes. For polarity determinations of all important GaN(h0h⁻l) semipolar surfaces, the above given polar angle range is suitable.},
doi = {10.1063/1.4894708},
journal = {Journal of Applied Physics},
number = 10,
volume = 116,
place = {United States},
year = 2014,
month = 9
}
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