Low-temperature study of array of dopant atoms on transport behaviors in silicon junctionless nanowire transistor

Journal Article · Sun Sep 28 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4896586· OSTI ID:22305725

Wang, Hao; Han, Weihua; Li, Xiaoming; Zhang, Yanbo; Yang, Fuhua ^[1]

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1. Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

We demonstrate temperature-dependent quantum transport characteristics in silicon junctionless nanowire transistor fabricated on Silicon-on-Insulator substrate by the femtosecond laser lithography. Clear drain-current oscillations originated from dopant-induced quantum dots are observed in the initial stage of the conduction for the silicon nanowire channel at low temperatures. Arrhenius plot of the conductance indicates the transition temperature of 30 K from variable-range hopping to nearest-neighbor hopping, which can be well explained under Mott formalism. The transition of electron hopping behavior is the interplay result between the thermal activation and the Coulomb interaction.

• OSTI ID: 22305725
• Journal Information: Journal of Applied Physics, Vol. 116, Issue 12; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ACTIVATION ENERGY
ATOMS
COULOMB FIELD
CURRENTS
INTERACTIONS
LASER RADIATION
NANOWIRES
OSCILLATIONS
QUANTUM DOTS
SILICON
SUBSTRATES
TEMPERATURE DEPENDENCE
TRANSISTORS
TRANSITION TEMPERATURE