Synthesis, crystal structure, and optical properties of Ba{sub 2}Cu{sub 2}ThS{sub 5}, and electronic structures of Ba{sub 2}Cu{sub 2}ThS{sub 5} and Ba{sub 2}Cu{sub 2}US{sub 5}
Journal Article
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· Journal of Solid State Chemistry
- Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL 60208-3113 (United States)
- Laboratoire de Cristallographie, Résonance Magnétique, et Modélisations CRM2 (UMR UHP-CNRS 7036), Faculté des Sciences et Techniques, Université de Lorraine, BP 70239, Boulevard des Aiguillettes, 54506 Vandoeuvre-lès-Nancy Cedex (France)
The compound Ba{sub 2}Cu{sub 2}ThS{sub 5} has been synthesized by the reaction of BaS, S, Cu, and Th at 1173 K. It crystallizes in the monoclinic space group C{sub 2h}{sup 3}−C2/m with two formula units in a cell of dimensions a=13.5616(8) Å, b=4.1159(2) Å, c=9.3548(6) Å, β=115.89(1)° (100 K). The structure comprises Ba{sup 2+} cations and {sup 2}{sub ∞}[Cu{sub 2}ThS{sub 5}{sup 4−}] layers. The two dimensional layers are formed by the connection of ThS{sub 6} octahedra and CuS{sub 4} tetrahedra along [001] with a sequence…. oct tet tet oct tet tet…. Optical measurements performed on Ba{sub 2}Cu{sub 2}ThS{sub 5} indicate an indirect band gap of 1.86 eV. DFT calculations performed with the HSE06 functional yield band gaps of 1.7 eV for Ba{sub 2}Cu{sub 2}ThS{sub 5} and 1.5 eV for the isostructural compound Ba{sub 2}Cu{sub 2}US{sub 5}. - Graphical abstract: View of the Ba{sub 2}Cu{sub 2}ThS{sub 5} structure and its indirect band gap. DFT calculation gives 1.7 eV. Highlights: ► The new solid-state compound Ba{sub 2}Cu{sub 2}ThS{sub 5} has been synthesized from BaS, S, Cu, and Th at 1173 K. ► Single-crystal optical measurements indicate of indirect band gap of 1.86 eV for Ba{sub 2}Cu{sub 2}ThS{sub 5}. ► DFT with the HSE06 functional predict band gaps of 1.7 and 1.5 eV for Ba{sub 2}Cu{sub 2}ThS{sub 5} and Ba{sub 2}Cu{sub 2}US{sub 5}.
- OSTI ID:
- 22304575
- Journal Information:
- Journal of Solid State Chemistry, Journal Name: Journal of Solid State Chemistry Vol. 200; ISSN 0022-4596; ISSN JSSCBI
- Country of Publication:
- United States
- Language:
- English
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