High-efficiency graphene nanomesh magnets realized by controlling mono-hydrogenation of pore edges
- Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan)
We demonstrate a drastic improvement in the efficiency of rare-element-free graphene nanomesh (GNM) magnets with saturation magnetization values as large as ∼10{sup −4 }emu/mm{sup 2}, which are 10–100 times greater than those in previous GNM magnets hydrogenated by only annealing under a hydrogen molecule (H{sub 2}) atmosphere, even at room temperature. This improvement is realized by a significant increase in the area of the mono-H-terminated pore edges by using hydrogen silsesquioxane resist treatment with electron beam irradiation, which can produce mono-H by detaching H-silicon (Si) bonds. This result must open the door for industrial applications of graphene magnets to rare-element-free magnetic and spintronic systems.
- OSTI ID:
- 22304457
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 25; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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