Atomic imaging and modeling of H{sub 2}O{sub 2}(g) surface passivation, functionalization, and atomic layer deposition nucleation on the Ge(100) surface
- Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093 (United States)
- Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States)
Passivation, functionalization, and atomic layer deposition nucleation via H{sub 2}O{sub 2}(g) and trimethylaluminum (TMA) dosing was studied on the clean Ge(100) surface at the atomic level using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Chemical analysis of the surface was performed using x-ray photoelectron spectroscopy, while the bonding of the precursors to the substrate was modeled with density functional theory (DFT). At room temperature, a saturation dose of H{sub 2}O{sub 2}(g) produces a monolayer of a mixture of –OH or –O species bonded to the surface. STS confirms that H{sub 2}O{sub 2}(g) dosing eliminates half-filled dangling bonds on the clean Ge(100) surface. Saturation of the H{sub 2}O{sub 2}(g) dosed Ge(100) surface with TMA followed by a 200 °C anneal produces an ordered monolayer of thermally stable Ge–O–Al bonds. DFT models and STM simulations provide a consistent model of the bonding configuration of the H{sub 2}O{sub 2}(g) and TMA dosed surfaces. STS verifies the TMA/H{sub 2}O{sub 2}/Ge surface has an unpinned Fermi level with no states in the bandgap demonstrating the ability of a Ge–O–Al monolayer to serve as an ideal template for further high-k deposition.
- OSTI ID:
- 22304339
- Journal Information:
- Journal of Chemical Physics, Vol. 140, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-9606
- Country of Publication:
- United States
- Language:
- English
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