Negative differential resistance and resistance switching behaviors in BaTiO{sub 3} thin films
Journal Article
·
· Journal of Applied Physics
- Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
The polycrystalline BaTiO{sub 3} (BTO) thin films were grown on F-doped SnO{sub 2} substrates by pulsed laser deposition. The devices show a rectification at a small voltage, while bipolar resistive switching (RS) and negative differential resistance (NDR) appear at a large voltage. Furthermore, RS remains and NDR disappears when no positive bias is applied, while both RS and NDR behaviors improve when increasing the positive bias. The electrons trapped/detrapped by interface states at Au/BTO interface are proposed to understand the above behaviors.
- OSTI ID:
- 22304284
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 20 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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