Electronic transport properties of inner and outer shells in near ohmic-contacted double-walled carbon nanotube transistors
- Beijing National Laboratory For Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871 (China)
We investigate electronic transport properties of field-effect transistors based on double-walled carbon nanotubes, of which inner shells are metallic and outer shells are semiconducting. When both shells are turned on, electron-phonon scattering is found to be the dominant phenomenon. On the other hand, when outer semiconducting shells are turned off, a zero-bias anomaly emerges in the dependence of differential conductance on the bias voltage, which is characterized according to the Tomonaga-Luttinger liquid model describing tunneling into one-dimensional materials. We attribute these behaviors to different contact conditions for outer and inner shells of the double-walled carbon nanotubes. A simple model combining Luttinger liquid model for inner metallic shells and electron-phonon scattering in outer semiconducting shells is given here to explain our transport data at different temperatures.
- OSTI ID:
- 22304153
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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