Diffraction-assisted micropatterning of silicon surfaces by ns-laser irradiation

Journal Article · Sat Jun 14 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4882660· OSTI ID:22304126

Acosta-Zepeda, C.; Mecalco, G.; Hernández-Pozos, J. L. ^[1]; Batina, N.; Morales-Reyes, I. ^[2]; Bonse, J. ^[3]

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1. Departamento de Física, Universidad Autónoma Metropolitana Iztapalapa, Av. San Rafael Atlixco No. 186, Col. Vicentina, C.P. 09340 México D. F. (Mexico)
2. Departamento de Química, Universidad Autónoma Metropolitana Iztapalapa, Av. San Rafael Atlixco No. 186, Col. Vicentina, C.P. 09340 México D. F. (Mexico)
3. BAM Bundesanstalt für Materialforschung und-prüfung, Unter den Eichen 87, D-12205 Berlin (Germany)

Single-pulse (532 nm, 8 ns) micropatterning of silicon with nanometric surface modulation is demonstrated by irradiating through a diffracting pinhole. The irradiation results obtained at fluences above the melting threshold are characterized by scanning electron and scanning force microscopy and reveal a good agreement with Fresnel diffraction theory. The physical mechanism is identified and discussed on basis of both thermocapillary and chemicapillary induced material transport during the molten state of the surface.

• OSTI ID: 22304126
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DIFFRACTION
ELECTRON SCANNING
IRRADIATION
LASER RADIATION
MELTING
MODULATION
NANOSTRUCTURES
PULSES
SILICON
SURFACES