Electronic transport and conduction mechanism transition in La{sub 1∕3}Sr{sub 2∕3}FeO{sub 3} thin films
We report on the electronic transport properties of epitaxial La{sub 1∕3}Sr{sub 2∕3}FeO{sub 3} films using temperature dependent resistivity, Hall effect, and magnetoresistance measurements. We show that the electronic phase transition, which occurs near 190 K, results in a change in conduction mechanism from nonadiabatic polaron transport at high temperatures to resistivity behavior following a power law temperature dependence at low temperatures. The phase transition is also accompanied by an abrupt increase in apparent mobility and Hall coefficient below the critical temperature (T*). We argue that the exotic low temperature transport properties are a consequence of the unusually long-range periodicity of the antiferromagnetic ordering, which also couples to the electronic transport in the form of a negative magnetoresistance below T* and a sign reversal of the Hall coefficient at T*. By comparing films of differing thicknesses, stoichiometry, and strain states, we demonstrate that the observed conduction behavior is a robust feature of La{sub 1∕3}Sr{sub 2∕3}FeO{sub 3}.
- OSTI ID:
- 22303999
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Characterization of films of La{sub 1{minus}x}Sr{sub x}MnO{sub 3{minus}{delta}} grown by means of metal organic chemical vapor deposition
Nonadiabatic hopping conduction in Sr{sub 1+x}La{sub 1{minus}x}FeO{sub 4} (0 {le} x {le} 0.20) below 300 K
Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIFERROMAGNETISM
CARRIER MOBILITY
CRITICAL TEMPERATURE
ELECTRIC CONDUCTIVITY
EPITAXY
FERRITES
HALL EFFECT
LANTHANUM COMPOUNDS
MAGNETORESISTANCE
PERIODICITY
PHASE TRANSFORMATIONS
STOICHIOMETRY
STRAINS
STRONTIUM COMPOUNDS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
THICKNESS
THIN FILMS