Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

Journal Article · Mon Jul 07 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4886096· OSTI ID:22303948

Guimarães, M. H. D.; Brant, J. C.; Tombros, N.; Wees, B. J. van ^[1]

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1. Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, Groningen (Netherlands)

We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm{sup 2} V{sup −1} s{sup −1} at room temperature to 49 000 cm{sup 2} V{sup −1} s{sup −1} at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices.

• OSTI ID: 22303948
• Journal Information: Applied Physics Letters, Vol. 105, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON NITRIDES
CARRIER MOBILITY
CRYSTALS
FABRICATION
GRAPHENE
LAYERS
TEMPERATURE RANGE 0273-0400 K