Resonant metallic nanostructure for enhanced two-photon absorption in a thin GaAs p-i-n diode

Journal Article · Mon Jul 07 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4887375· OSTI ID:22303925

Portier, Benjamin; Pardo, Fabrice; Péré-Laperne, Nicolas; Steveler, Emilie; Dupuis, Christophe; Bardou, Nathalie; Lemaître, Aristide; Pelouard, Jean-Luc ^[1]; Vest, Benjamin; Jaeck, Julien; Rosencher, Emmanuel ^[2]; Haïdar, Riad ^[2]

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1. Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis (France)
2. ONERA The French Aerospace Lab, Chemin de la Hunière, F-91760 Palaiseau (France)

Degenerate two-photon absorption (TPA) is investigated in a 186 nm thick gallium arsenide (GaAs) p-i-n diode embedded in a resonant metallic nanostructure. The full device consists in the GaAs layer, a gold subwavelength grating on the illuminated side, and a gold mirror on the opposite side. For TM-polarized light, the structure exhibits a resonance close to 1.47 μm, with a confined electric field in the intrinsic region, far from the metallic interfaces. A 109 times increase in photocurrent compared to a non-resonant device is obtained experimentally, while numerical simulations suggest that both gain in TPA-photocurrent and angular dependence can be further improved. For optimized grating parameters, a maximum gain of 241 is demonstrated numerically and over incidence angle range of (−30°; +30°).

• OSTI ID: 22303925
• Journal Information: Applied Physics Letters, Vol. 105, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ABSORPTION
COMPUTERIZED SIMULATION
ELECTRIC FIELDS
EQUIPMENT
GAIN
GALLIUM ARSENIDES
GOLD
INCIDENCE ANGLE
INTERFACES
LAYERS
NANOSTRUCTURES
PHOTONS
P-N JUNCTIONS
RESONATORS
VISIBLE RADIATION