The fate of the 2√3 × 2√3R(30°) silicene phase on Ag(111)

Journal Article · Mon Sep 01 00:00:00 EDT 2014 · APL Materials

DOI:https://doi.org/10.1063/1.4894871· OSTI ID:22303567

Liu, Zhi-Long; Wang, Mei-Xiao; Liu, Canhua; Jia, Jin-Feng ^[1]; Vogt, Patrick ^[2]; Quaresima, Claudio; Ottaviani, Carlo; Olivieri, Bruno ^[3]

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1. Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China)
2. Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstraße 36, 10623 Berlin (Germany)
3. ISAC-CNR, via Fosso del Cavaliere 100, Rome (Italy)

Silicon atoms deposited on Ag(111) produce various single layer silicene sheets with different buckling patterns and periodicities. Low temperature scanning tunneling microscopy reveals that one of the silicene sheets, the hypothetical √7 × √7 silicene structure, on 2√3 × 2√3 Ag(111), is inherently highly defective and displays no long-range order. Moreover, Auger and photoelectron spectroscopy measurements reveal its sudden death, to end, in a dynamic fating process at ∼300 °C. This result clarifies the real nature of the 2√3 × 2√3R(30°) silicene phase and thus helps to understand the diversity of the silicene sheets grown on Ag(111)

• OSTI ID: 22303567
• Journal Information: APL Materials, Vol. 2, Issue 9; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPOSITS
PERIODICITY
PHOTOELECTRON SPECTROSCOPY
SCANNING TUNNELING MICROSCOPY
SILICON
SILVER 111
TEMPERATURE RANGE 0065-0273 K