Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon
As-grown InGaAs nanoneedle lasers, synthesized at complementary metal–oxide–semiconductor compatible temperatures on polycrystalline and crystalline silicon substrates, were studied in photoluminescence experiments. Radiation patterns of three-dimensional whispering gallery modes were observed upon optically pumping the needles above the lasing threshold. Using the radiation patterns as well as finite-difference-time-domain simulations and polarization measurements, all modal numbers of the three-dimensional whispering gallery modes could be identified.
- OSTI ID:
- 22303483
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 105; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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