Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS{sub 2}
- Materials Science and Engineering, Rutgers University, 607 Taylor Road, Piscataway, New Jersey 08854 (United States)
- MPA-11 Materials Synthesis and Integrated Devices, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
- Mechanical Engineering and Materials Science Department, Rice University, Houston, Texas 77005 (United States)
Two dimensional transition metal dichalcogenides (2D TMDs) offer promise as opto-electronic materials due to their direct band gap and reasonably good mobility values. However, most metals form high resistance contacts on semiconducting TMDs such as MoS{sub 2}. The large contact resistance limits the performance of devices. Unlike bulk materials, low contact resistance cannot be stably achieved in 2D materials by doping. Here we build on our previous work in which we demonstrated that it is possible to achieve low contact resistance electrodes by phase transformation. We show that similar to the previously demonstrated mechanically exfoliated samples, it is possible to decrease the contact resistance and enhance the FET performance by locally inducing and patterning the metallic 1T phase of MoS{sub 2} on chemically vapor deposited material. The device properties are substantially improved with 1T phase source/drain electrodes.
- OSTI ID:
- 22303424
- Journal Information:
- APL Materials, Vol. 2, Issue 9; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2166-532X
- Country of Publication:
- United States
- Language:
- English
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