Band alignment at interfaces of amorphous Al{sub 2}O{sub 3} with Ge{sub 1−x}Sn{sub x}- and strained Ge-based channels

Journal Article · Mon May 19 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4878558· OSTI ID:22300293

Chou, H. -Y.; Houssa, M.; Stesmans, A. ^[1]; Vincent, B.; Gencarelli, F.; Shimura, Y.; Merckling, C.; Loo, R. ^[2]; Nakatsuka, O.; Zaima, S. ^[3]

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1. Department of Physics, University of Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium)
2. Imec, Kapeldreef 75, B-3001 Leuven (Belgium)
3. Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

Spectroscopy of internal photoemission of electrons from Ge and Ge{sub 1−x}Sn{sub x} (x ≤ 0.08) alloys into amorphous Al{sub 2}O{sub 3} is used to evaluate the energy of the semiconductor valence band top. It is found that in Ge and Ge{sub 1−x}Sn{sub x} the valence bands are aligned within the measurement accuracy (±0.05 eV) irrespective of the strain imposed on the semiconductor or by the kind of passivating inter-layer applied between the semiconductor and alumina. This indicates that the Ge{sub 1−x}Sn{sub x}-stressor approach may be useful for strain engineering in p-channel Ge metal-oxide-semiconductor transistors.

• OSTI ID: 22300293
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACCURACY
ALIGNMENT
ALUMINIUM OXIDES
AMORPHOUS STATE
ELECTRON EMISSION
ELECTRONS
EV RANGE
FIELD EFFECT TRANSISTORS
GERMANIUM ALLOYS
HETEROJUNCTIONS
INTERFACES
LAYERS
METALS
PHOTOEMISSION
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
STRAINS
STRESSES
TIN ALLOYS
TRANSISTORS