The importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility

Journal Article · Mon Jun 09 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4883216· OSTI ID:22300015

Kotsuki, Kenji; Tanaka, Hiroshige ^[1]; Obata, Seiji ^[2]; Stauss, Sven; Terashima, Kazuo ^[3]; Saiki, Koichiro ^[1]

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1. Department of Chemistry, The University of Tokyo, Kashiwanoha 5-1-5, Kashiwa, Chiba 277-8561 (Japan)
2. Department of Complexity Science and Engineering, The University of Tokyo, Kashiwanoha 5-1-5, Kashiwa, Chiba 277-8561 (Japan)
3. Department of Advanced Materials Science, The University of Tokyo, Kashiwanoha 5-1-5, Kashiwa, Chiba 277-8561 (Japan)

We have investigated the film morphology and the field effect mobility of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) thin films which were formed by spin coating on the SiO{sub 2} substrate with solution-processed graphene electrodes. The domain size and the density of aggregates in the C8-BTBT film showed the same dependence on the spinning speed. These competitive two factors (domain size and density of aggregates) give an optimum spinning speed, at which the field effect mobility of C8-BTBT transistor showed a maximum (2.6 cm{sup 2}/V s). This result indicates the importance of spinning speed in the fabrication of solution processed organic thin film transistors by spin coating.

• OSTI ID: 22300015
• Journal Information: Applied Physics Letters, Vol. 104, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER MOBILITY
DENSITY
ELECTRODES
FIELD EFFECT TRANSISTORS
GRAPHENE
SILICA
SILICON OXIDES
SOLUTIONS
SPIN
SPIN-ON COATING
SUBSTRATES
THIN FILMS
THIONAPHTHENES
TRANSISTORS