Improving dielectric performance in anodic aluminum oxide via detection and passivation of defect states
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)
- Department of Chemical Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States)
The electronic and ionic transports in 32–56 nm thick anodic aluminum oxide films are investigated before and after a 1-h anneal at 200–400 °C in argon. Results are correlated to their defect density as measured by the Mott-Schottky technique. Solid state measurements show that electronic conduction upon annealing is hindered by an increase in the Schottky emission barrier, induced by a reduction in dopant density. Using an electrochemical contact, the films fail rapidly under cathodic polarization, unless defect density is decreased down to 10{sup 17} cm{sup −3}, resulting in a three order of magnitude reduction in current and no visible gas evolution. Under anodic polarization, the decrease in defect density delays the onset of ionic conduction as well as further oxide growth and failure.
- OSTI ID:
- 22299933
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
ANNEALING
ARGON
DEFECTS
DENSITY
DETECTION
DIELECTRIC MATERIALS
DIFFUSION BARRIERS
ELECTRIC CONDUCTIVITY
ELECTROCHEMISTRY
ELECTRON MOBILITY
EMISSION
FILMS
ION MOBILITY
PASSIVATION
POLARIZATION
SCHOTTKY BARRIER DIODES
SOLIDS
TEMPERATURE RANGE 0400-1000 K