Operation of resonant-tunneling diodes with strong back injection from the collector at frequencies up to 1.46 THz

Journal Article · Mon Jun 16 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4884602· OSTI ID:22299930

Feiginov, Michael; Kanaya, Hidetoshi; Suzuki, Safumi; Asada, Masahiro ^[1]

---

1. Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1-S9-3 O-okayama, Meguro-Ku, Tokyo 152-8552 (Japan)

In search for possibilities to increase the operating frequencies of resonant-tunneling diodes (RTDs), we are studying RTDs working in an unusual regime. The collector side of our diodes is so heavily doped that the collector depletion region is fully eliminated in our RTDs and the ground quantum-well subband stays immersed under (or stays close to) the collector quasi-Fermi level. The electron injection from the collector into the RTD quantum well is very strong in our diodes and stays comparable to that from the emitter in the whole range of RTD operating biases. Our RTDs exhibit well pronounced negative-differential-conductance region and peak-to-valley current ratio around 1.8. We demonstrate operation of our diodes in RTD oscillators up to 1.46 THz. We also observe a fine structure in the emission spectra of our RTD oscillators, when they are working in the regime close to the onset of oscillations.

• OSTI ID: 22299930
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CURRENTS
DOPED MATERIALS
ELECTRON BEAM INJECTION
EMISSION SPECTRA
FERMI LEVEL
FINE STRUCTURE
INJECTION
OSCILLATIONS
OSCILLATORS
QUANTUM WELLS
RESONANCE
TUNNEL DIODES