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Title: Tunable electronic properties of silicon nanowires under strain and electric bias

Abstract

The electronic structure characteristics of silicon nanowires under strain and electric bias are studied using first-principles density functional theory. The unique wire-like structure leads to distinct spatial distribution of carriers, which can be tailored by applying tensile and compressive strains, as well as by an electric bias. Our results indicate that the combined effect of strain and electric bias leads to tunable electronic structures that can be used for piezo-electric devices.

Authors:
 [1];  [2];  [1]
  1. Department of Physics and Center for Functional Nanoscale Materials, Clark Atlanta University, Atlanta, Georgia 30314 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22299778
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Advances; Journal Volume: 4; Journal Issue: 7; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DENSITY FUNCTIONAL METHOD; ELECTRONIC STRUCTURE; QUANTUM WIRES; SILICON; SPATIAL DISTRIBUTION; STRAINS

Citation Formats

Nduwimana, Alexis, Georgia Perimeter College, Decatur, Georgia 30034, and Wang, Xiao-Qian, E-mail: xwang@cau.edu. Tunable electronic properties of silicon nanowires under strain and electric bias. United States: N. p., 2014. Web. doi:10.1063/1.4890674.
Nduwimana, Alexis, Georgia Perimeter College, Decatur, Georgia 30034, & Wang, Xiao-Qian, E-mail: xwang@cau.edu. Tunable electronic properties of silicon nanowires under strain and electric bias. United States. doi:10.1063/1.4890674.
Nduwimana, Alexis, Georgia Perimeter College, Decatur, Georgia 30034, and Wang, Xiao-Qian, E-mail: xwang@cau.edu. Tue . "Tunable electronic properties of silicon nanowires under strain and electric bias". United States. doi:10.1063/1.4890674.
@article{osti_22299778,
title = {Tunable electronic properties of silicon nanowires under strain and electric bias},
author = {Nduwimana, Alexis and Georgia Perimeter College, Decatur, Georgia 30034 and Wang, Xiao-Qian, E-mail: xwang@cau.edu},
abstractNote = {The electronic structure characteristics of silicon nanowires under strain and electric bias are studied using first-principles density functional theory. The unique wire-like structure leads to distinct spatial distribution of carriers, which can be tailored by applying tensile and compressive strains, as well as by an electric bias. Our results indicate that the combined effect of strain and electric bias leads to tunable electronic structures that can be used for piezo-electric devices.},
doi = {10.1063/1.4890674},
journal = {AIP Advances},
number = 7,
volume = 4,
place = {United States},
year = {Tue Jul 15 00:00:00 EDT 2014},
month = {Tue Jul 15 00:00:00 EDT 2014}
}