Diffusion injected multi-quantum well light-emitting diode structure

Journal Article · Mon Feb 24 04:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4866343· OSTI ID:22293091

Nykänen, H.; Svensk, O.; Suihkonen, S.; Sopanen, M. ^[1]; Kivisaari, P.; Oksanen, J.; Tulkki, J. ^[2]

---

1. Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FI-00076 Aalto (Finland)
2. Department of Biomedical Engineering and Computational Science, Aalto University, P.O. Box 12200, FI-00076 Aalto (Finland)

The attention towards light-emitting diode (LED) structures based on nanowires, surface plasmon coupled LEDs, and large-area high-power LEDs has been increasing for their potential in increasing the optical output power and efficiency of LEDs. In this work we demonstrate an alternative way to inject charge carriers into the active region of an LED, which is based on completely different current transport mechanism compared to conventional current injection approaches. The demonstrated structure is expected to help overcoming some of the challenges related to current injection with conventional structures. A functioning III-nitride diffusion injected light-emitting diode structure, in which the light-emitting active region is located outside the pn-junction, is realized and characterized. In this device design, the charge carriers are injected into the active region by bipolar diffusion, which could also be utilized to excite otherwise challenging to realize light-emitting structures.

• OSTI ID: 22293091
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGE CARRIERS
CURRENTS
DIFFUSION
EFFICIENCY
LIGHT EMITTING DIODES
P-N JUNCTIONS
QUANTUM WELLS
QUANTUM WIRES