Thermal interface conductance across a graphene/hexagonal boron nitride heterojunction
- Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089 (United States)
- Department of Mechanical Engineering and Texas Materials Institute, University of Texas at Austin, Austin, Texas 78712 (United States)
We measure thermal transport across a graphene/hexagonal boron nitride (h-BN) interface by electrically heating the graphene and measuring the temperature difference between the graphene and BN using Raman spectroscopy. Because the temperature of the graphene and BN are measured optically, this approach enables nanometer resolution in the cross-plane direction. A temperature drop of 60 K can be achieved across this junction at high electrical powers (14 mW). Based on the temperature difference and the applied power data, we determine the thermal interface conductance of this junction to be 7.4 × 10{sup 6} Wm{sup −2}K{sup −1}, which is below the 10{sup 7}–10{sup 8} Wm{sup −2}K{sup −1} values previously reported for graphene/SiO{sub 2} interface.
- OSTI ID:
- 22293068
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
CVD growth of graphene under exfoliated hexagonal boron nitride for vertical hybrid structures
Mobility enhancement in graphene transistors on low temperature pulsed laser deposited boron nitride