One-step aluminium-assisted crystallization of Ge epitaxy on Si by magnetron sputtering

Journal Article · Mon Feb 03 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4864463· OSTI ID:22283208

Liu, Ziheng; Hao, Xiaojing; Ho-Baillie, Anita; Green, Martin A. ^[1]

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1. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052 (Australia)

In this work, one-step aluminium-assisted crystallization of Ge on Si is achieved via magnetron sputtering by applying an in-situ low temperature (50 °C to 150 °C) heat treatment in between Al and Ge depositions. The effect of heat treatment on film properties and the growth mechanism of Ge epitaxy on Si are studied via X-ray diffraction, Raman and transmission electron microscopy analyses. Compared with the conventional two-step process, the one-step aluminium-assisted crystallization requires much lower thermal budget and results in pure Ge epitaxial layer, which may be suitable for use as a virtual substrate for the fabrication of III-V solar cells.

• OSTI ID: 22283208
• Journal Information: Applied Physics Letters, Vol. 104, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
COMPARATIVE EVALUATIONS
CRYSTALLIZATION
DEPOSITION
EPITAXY
FABRICATION
GERMANIUM
HEAT TREATMENTS
MAGNETRONS
RAMAN SPECTROSCOPY
SILICON
SOLAR CELLS
SPUTTERING
TEMPERATURE DEPENDENCE
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION