Probing deeper by hard x-ray photoelectron spectroscopy
- CEA, LETI, MINATEC Campus, 38054 Grenoble Cedex 09 (France)
- European Synchrotron Radiation Facility, 6 rue Jules Horowitz, F-38043 Grenoble (France)
- STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles (France)
- Institut des Nanotechnologies de Lyon (INL), UMR CNRS 5270, Ecole Centrale de Lyon, 36, avenue Guy de Collongue 69 134 Ecully Cedex (France)
- Department of Physics, Chemistry and Pharmacy, University of Southern Denmark, DK-5230 Odense M (Denmark)
We report an hard x-ray photoelectron spectroscopy method combining high excitation energy (15 keV) and improved modelling of the core-level energy loss features. It provides depth distribution of deeply buried layers with very high sensitivity. We show that a conventional approach relying on intensities of the core-level peaks is unreliable due to intense plasmon losses. We reliably determine the depth distribution of 1 ML La in a high-κ/metal gate stack capped with 50 nm a-Si. The method extends the sensitivity of photoelectron spectroscopy to depths beyond 50 nm.
- OSTI ID:
- 22283204
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 104; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Quantitative spectromicroscopy from inelastically scattered photoelectrons in the hard X-ray range
Probing buried organic-organic and metal-organic heterointerfaces by hard x-ray photoelectron spectroscopy
Direct observation of bias-dependence potential distribution in metal/HfO{sub 2} gate stack structures by hard x-ray photoelectron spectroscopy under device operation
Journal Article
·
Mon Jul 04 00:00:00 EDT 2016
· Applied Physics Letters
·
OSTI ID:22590629
Probing buried organic-organic and metal-organic heterointerfaces by hard x-ray photoelectron spectroscopy
Journal Article
·
Sun Nov 25 23:00:00 EST 2012
· Applied Physics Letters
·
OSTI ID:22089524
Direct observation of bias-dependence potential distribution in metal/HfO{sub 2} gate stack structures by hard x-ray photoelectron spectroscopy under device operation
Journal Article
·
Mon Jan 27 23:00:00 EST 2014
· Journal of Applied Physics
·
OSTI ID:22275599