Efficiency enhancement of InGaN/GaN solar cells with nanostructures

Journal Article · Mon Feb 03 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4864640· OSTI ID:22283202

Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. ^[1]

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1. Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520 nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9 V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

• OSTI ID: 22283202
• Journal Information: Applied Physics Letters, Vol. 104, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
30 DIRECT ENERGY CONVERSION
CRYSTALS
ELECTRIC POTENTIAL
ENERGY CONVERSION
ENERGY EFFICIENCY
FILL FACTORS
GALLIUM NITRIDES
HETEROJUNCTIONS
ILLUMINANCE
INDIUM
INDIUM COMPOUNDS
PERFORMANCE
PERIODICITY
QUANTUM WELLS
SOLAR CELLS