Electronic states of NO{sub 2}-exposed H-terminated diamond/Al{sub 2}O{sub 3} heterointerface studied by synchrotron radiation photoemission and X-ray absorption spectroscopy

Journal Article · Mon Feb 17 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4865929· OSTI ID:22283137

Takahashi, Kazutoshi; Imamura, Masaki ^[1]; Hirama, Kazuyuki ^[2]; Kasu, Makoto ^[3]

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1. Synchrotron Light Application Center, Saga University, Saga 840-8502 (Japan)
2. NTT Basic Research Laboratories, NTT Corporation, Atsugi 243-0198 (Japan)
3. Department of Electrical and Electronic Engineering, Saga University, Saga 840-8502 (Japan)

The energy band-lineup and the electronic structure of NO{sub 2}-exposed H-terminated diamond/Al{sub 2}O{sub 3} heterointerface have been investigated by synchrotron radiation photoemission and x-ray absorption near-edge structure (XANES) measurements. It is found that the energy band-lineup is stagger-type, so-called type-II, with its valence band discontinuity of as high as 3.9 eV and its conduction band discontinuity of 2.7 eV. The valence band maximum of the H-terminated diamond surface is positioned at Fermi level as a result of high-density hole accumulation on the diamond side. The XANES measurement has shown that the oxygen-derived interface state locates at about 1–3 eV above the Fermi level.

• OSTI ID: 22283137
• Journal Information: Applied Physics Letters, Vol. 104, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
ALUMINIUM OXIDES
DIAMONDS
ELECTRONIC STRUCTURE
FERMI LEVEL
HOLES
INTERFACES
NITROGEN DIOXIDE
PHOTOEMISSION
SURFACES
SYNCHROTRON RADIATION
VALENCE
X-RAY SPECTROSCOPY