Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

Journal Article · Mon Feb 17 04:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4866168· OSTI ID:22283124

Yokota, Nobuhide; Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi ^[1]

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1. Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192 (Japan)

We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-μm transport was observed within an electron spin lifetime of 1.2 ns at room temperature when using an in-plane electric field of 1.75 kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

• OSTI ID: 22283124
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM ARSENIDES
DIFFUSION EQUATIONS
ELECTRIC FIELDS
ELECTRONS
GALLIUM ARSENIDES
HETEROJUNCTIONS
KERR EFFECT
LAYERS
LIFETIME
POISSON EQUATION
QUANTUM WELLS
SPIN
TEMPERATURE RANGE 0273-0400 K
TIME RESOLUTION