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Title: Hydrogen sensing characteristics of semipolar (112{sup ¯}2) GaN Schottky diodes

Abstract

The hydrogen detection characteristics of semipolar (112{sup ¯}2) plane GaN Schottky diodes were investigated and compared to c-plane Ga- and N-polar and nonpolar a-plane (112{sup ¯}0) GaN diodes. The semipolar GaN diodes showed large current response to 4% hydrogen in nitrogen gas with an accompanying Schottky barrier reduction of 0.53 eV at 25 °C, and the devices exhibited full recovery to the initial current level upon switching to a nitrogen ambient. The current-voltage characteristics of the semipolar devices remained rectifying after hydrogen exposure, in sharp contrast to the case of c-plane N-polar GaN. These results show that the surface atom configuration and polarity play a strong role in hydrogen sensing with GaN.

Authors:
 [1]; ;  [2];  [3];  [4];  [5];  [6]
  1. School of Materials Science and Engineering, Hongik University, Jochiwon, Sejong 339-701 (Korea, Republic of)
  2. Department of Chemical Engineering, Dankook University, Yongin 448-701 (Korea, Republic of)
  3. Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793 (Korea, Republic of)
  4. Department of Applied Physics, Institute of Nanosensor and Biotechnology, Dankook University, Yongin 448-701 (Korea, Republic of)
  5. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
  6. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
Publication Date:
OSTI Identifier:
22283123
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; COMPARATIVE EVALUATIONS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; GALLIUM NITRIDES; HYDROGEN; NITROGEN; SCHOTTKY BARRIER DIODES; SENSORS; SURFACES

Citation Formats

Hyeon Baik, Kwang, Kim, Hyonwoong, Jang, Soohwan, E-mail: jangmountain@dankook.ac.kr, Lee, Sung-Nam, Lim, Eunju, Pearton, S. J., and Ren, F. Hydrogen sensing characteristics of semipolar (112{sup ¯}2) GaN Schottky diodes. United States: N. p., 2014. Web. doi:10.1063/1.4866010.
Hyeon Baik, Kwang, Kim, Hyonwoong, Jang, Soohwan, E-mail: jangmountain@dankook.ac.kr, Lee, Sung-Nam, Lim, Eunju, Pearton, S. J., & Ren, F. Hydrogen sensing characteristics of semipolar (112{sup ¯}2) GaN Schottky diodes. United States. doi:10.1063/1.4866010.
Hyeon Baik, Kwang, Kim, Hyonwoong, Jang, Soohwan, E-mail: jangmountain@dankook.ac.kr, Lee, Sung-Nam, Lim, Eunju, Pearton, S. J., and Ren, F. 2014. "Hydrogen sensing characteristics of semipolar (112{sup ¯}2) GaN Schottky diodes". United States. doi:10.1063/1.4866010.
@article{osti_22283123,
title = {Hydrogen sensing characteristics of semipolar (112{sup ¯}2) GaN Schottky diodes},
author = {Hyeon Baik, Kwang and Kim, Hyonwoong and Jang, Soohwan, E-mail: jangmountain@dankook.ac.kr and Lee, Sung-Nam and Lim, Eunju and Pearton, S. J. and Ren, F.},
abstractNote = {The hydrogen detection characteristics of semipolar (112{sup ¯}2) plane GaN Schottky diodes were investigated and compared to c-plane Ga- and N-polar and nonpolar a-plane (112{sup ¯}0) GaN diodes. The semipolar GaN diodes showed large current response to 4% hydrogen in nitrogen gas with an accompanying Schottky barrier reduction of 0.53 eV at 25 °C, and the devices exhibited full recovery to the initial current level upon switching to a nitrogen ambient. The current-voltage characteristics of the semipolar devices remained rectifying after hydrogen exposure, in sharp contrast to the case of c-plane N-polar GaN. These results show that the surface atom configuration and polarity play a strong role in hydrogen sensing with GaN.},
doi = {10.1063/1.4866010},
journal = {Applied Physics Letters},
number = 7,
volume = 104,
place = {United States},
year = 2014,
month = 2
}
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