Hydrogen sensing characteristics of semipolar (112{sup ¯}2) GaN Schottky diodes
- School of Materials Science and Engineering, Hongik University, Jochiwon, Sejong 339-701 (Korea, Republic of)
- Department of Chemical Engineering, Dankook University, Yongin 448-701 (Korea, Republic of)
- Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793 (Korea, Republic of)
- Department of Applied Physics, Institute of Nanosensor and Biotechnology, Dankook University, Yongin 448-701 (Korea, Republic of)
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
The hydrogen detection characteristics of semipolar (112{sup ¯}2) plane GaN Schottky diodes were investigated and compared to c-plane Ga- and N-polar and nonpolar a-plane (112{sup ¯}0) GaN diodes. The semipolar GaN diodes showed large current response to 4% hydrogen in nitrogen gas with an accompanying Schottky barrier reduction of 0.53 eV at 25 °C, and the devices exhibited full recovery to the initial current level upon switching to a nitrogen ambient. The current-voltage characteristics of the semipolar devices remained rectifying after hydrogen exposure, in sharp contrast to the case of c-plane N-polar GaN. These results show that the surface atom configuration and polarity play a strong role in hydrogen sensing with GaN.
- OSTI ID:
- 22283123
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 104; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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