Efficient long wavelength interband photoluminescence from HgCdTe epitaxial films at wavelengths up to 26 μm
- Institute for Physics of Microstructures of Russian Academy of Sciences, 603950 Nizhny Novgorod (Russian Federation)
- A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk (Russian Federation)
Photoluminescence (PL) and photoconductivity (PC) studies of Hg{sub 1−x}Cd{sub x}Te (0.19 ≤ x ≤ 0.23) epitaxial films are presented. Interband PL is observed at wavelengths from 26 to 6 μm and in the temperature range 18 K–200 K. The PL line full width at half maximum is about 6 meV (4kT) at 18 K and approaches its theoretical limit of 1.8kT at higher temperatures. Carrier recombination process is also investigated by time resolved studies of PL and PC at pulsed excitation. Radiative transitions are shown to be the dominating mechanism of carrier recombination at high excitation levels.
- OSTI ID:
- 22283122
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 104; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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