Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors

Journal Article · Mon Mar 03 04:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4867525· OSTI ID:22283082

Ma, Xiao-Hua; Chen, Wei-Wei; Hou, Bin; Zhu, Jie-Jie ^[1]; Zhang, Kai; Zhang, Jin-Cheng; Zheng, Xue-Feng; Hao, Yue ^[2]

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1. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071 (China)
2. Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071 (China)

Forward gate-bias stress experiments are performed to investigate the variation of trap states under Schottky contact in GaN-based high electron mobility transistors. Traps with activation energy E{sub T} ranging from 0.22 eV to 0.31 eV are detected at the gate-semiconductor interface by dynamic conductance technique. Trap density decreases prominently after stressing, particularly for traps with E{sub T} > 0.24 eV. X-ray photoelectron spectroscopy measurements reveal a weaker Ga-O peak on the stressed semiconductor surface. It is postulated that oxygen is stripped by Ni to form NiO upon electrical stress, contributing to the decrease in O{sub N} donor sates under the gate contact.

• OSTI ID: 22283082
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ACTIVATION ENERGY
ALUMINIUM NITRIDES
DENSITY
ELECTRIC CONDUCTIVITY
ELECTRON MOBILITY
GALLIUM NITRIDES
HETEROJUNCTIONS
INTERFACES
NICKEL OXIDES
OXYGEN
SEMICONDUCTOR MATERIALS
STRESSES
SURFACES
TRANSISTORS
TRAPS
X-RAY PHOTOELECTRON SPECTROSCOPY