A nitrogen-hyperdoped silicon material formed by femtosecond laser irradiation

Journal Article · Mon Mar 03 04:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4868017· OSTI ID:22283028

Dong, Xiao; Zhu, Zhen; Shao, Hezhu; Rong, Ximing; Zhuang, Jun ^[1]; Li, Ning; Liang, Cong; Sun, Haibin; Zhao, Li ^[2]; Feng, Guojin ^[3]

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1. Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China)
2. State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai 200433 (China)
3. Spectrophotometry Laboratory, National Institute of Metrology, Beijing 100013 (China)

A supersaturation of nitrogen atoms is found in the surface layer of microstructured silicon after femtosecond (fs) laser irradiation in NF{sub 3}. The average nitrogen concentration in the uppermost 50 nm is about 0.5 ± 0.2 at. %, several orders of magnitude higher than the solid solubility of nitrogen atoms in silicon. The nitrogen-hyperdoped silicon shows high crystallinity in the doped layer, which is due to the repairing effect of nitrogen on defects in silicon lattices. Nitrogen atoms and vacancies can be combined into thermal stable complexes after fs laser irradiation, which makes the nitrogen-hyperdoped silicon exhibit good thermal stability of optical properties.

• OSTI ID: 22283028
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMS
CONCENTRATION RATIO
CRYSTAL DOPING
LASER RADIATION
LAYERS
MICROSTRUCTURE
NITROGEN
NITROGEN FLUORIDES
OPTICAL PROPERTIES
PHASE STABILITY
SILICON
SOLIDS
SUPERSATURATION
SURFACES
VACANCIES