Epitaxial growth of large-area bilayer graphene on Ru(0001)

Journal Article · Mon Mar 03 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4868021· OSTI ID:22283023

Que, Yande; Xiao, Wende; Fei, Xiangmin; Chen, Hui; Du, S. X.; Huang, Li ^[1]

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1. Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

Large-area bilayer graphene (BG) is grown epitaxially on Ru(0001) surface and characterized by low temperature scanning tunneling microscopy. The lattice of the bottom layer of BG is stretched by 1.2%, while strain is absent from the top layer. The lattice mismatch between the two layers leads to the formation of a moiré pattern with a periodicity of ∼21.5 nm and a mixture of AA- and AB-stacking. The √3 × √3 superstructure around atomic defects is attributed to the inter-valley scattering of the delocalized π-electrons, demonstrating that the as-grown BG behaves like intrinsic free-standing graphene.

• OSTI ID: 22283023
• Journal Information: Applied Physics Letters, Vol. 104, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL DEFECTS
CRYSTAL LATTICES
ELECTRONS
EPITAXY
GRAPHENE
LAYERS
MIXTURES
PERIODICITY
RUTHENIUM
SCANNING TUNNELING MICROSCOPY
STRAINS
SURFACES