Fine structure of the red luminescence band in undoped GaN

Journal Article · Mon Jan 20 04:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4862790· OSTI ID:22280620

Usikov, A. ^[1]; Helava, H.; Makarov, Yu. ^[1]

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1. Nitride Crystals, Inc., 181E Industry Ct., Ste. B, Deer Park, New York 11729 (United States)

Many point defects in GaN responsible for broad photoluminescence (PL) bands remain unidentified. Their presence in thick GaN layers grown by hydride vapor phase epitaxy (HVPE) detrimentally affects the material quality and may hinder the use of GaN in high-power electronic devices. One of the main PL bands in HVPE-grown GaN is the red luminescence (RL) band with a maximum at 1.8 eV. We observed the fine structure of this band with a zero-phonon line (ZPL) at 2.36 eV, which may help to identify the related defect. The shift of the ZPL with excitation intensity and the temperature-related transformation of the RL band fine structure indicate that the RL band is caused by transitions from a shallow donor (at low temperature) or from the conduction band (above 50 K) to an unknown deep acceptor having an energy level 1.130 eV above the valence band.

• OSTI ID: 22280620
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 3 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRONIC STRUCTURE
ENERGY LEVELS
EXCITATION
FINE STRUCTURE
GALLIUM NITRIDES
HYDRIDES
LAYERS
PHASE TRANSFORMATIONS
PHONONS
PHOTOLUMINESCENCE
POINT DEFECTS
TEMPERATURE DEPENDENCE
VALENCE
VAPOR PHASE EPITAXY