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Title: Perpendicularly magnetized spin filtering Cu/Ni multilayers

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4862969· OSTI ID:22280604
; ; ;  [1]
  1. Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

Spin filtering at perpendicular magnetized Cu/Ni multilayer/GaAs(001) interfaces is demonstrated at remanence using optical spin orientation method. [Cu(9 nm)/Ni(t{sub Ni} nm)]{sub n} multilayers are found to show a crossover from the in-plane to out-of-plane magnetic anisotropy at the Cu/Ni bilayer repetition n = 4 and the Ni layer thickness t{sub Ni} = 3. For a perpendicularly magnetized Cu/Ni multilayer/n-GaAs(001) interface, circular polarization dependent photocurrent shows a clear hysteretic behavior under optical spin orientation conditions as a function of magnetic field out-of-plane while the bias dependence exhibits a substantial peak at a forward bias, verifying that Cu/Ni multilayers work as an efficient spin filter in the remanent state.

OSTI ID:
22280604
Journal Information:
Applied Physics Letters, Vol. 104, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English