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Title: Excess carrier generation in femtosecond-laser processed sulfur doped silicon by means of sub-bandgap illumination

Abstract

With Fourier-transform photocurrent spectroscopy and spectral response measurements, we show that silicon doped with sulfur by femtosecond laser irradiation generates excess carriers, when illuminated with infrared light above 1100 nm. Three distinct sub-bandgap photocurrent features are observed. Their onset energies are in good agreement with the known sulfur levels S{sup +}, S{sup 0}, and S{sub 2}{sup 0}. The excess carriers are separated by a pn-junction to form a significant photocurrent. Therefore, this material likely demonstrates the impurity band photovoltaic effect.

Authors:
 [1]; ; ;  [2];  [3];  [4];  [1];  [5]
  1. Clausthal University of Technology, EFZN, Am Stollen 19B, 38640 Goslar (Germany)
  2. Fraunhofer Heinrich Hertz Institute, Am Stollen 19B, 38640 Goslar (Germany)
  3. Max Born Institut, Max-Born-Straße 2A, 12489 Berlin (Germany)
  4. Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig (Germany)
  5. (Germany)
Publication Date:
OSTI Identifier:
22280560
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; ELECTRONIC STRUCTURE; FOURIER TRANSFORMATION; ILLUMINANCE; LASER RADIATION; PHOTOVOLTAIC EFFECT; P-N JUNCTIONS; SILICON; SPECTROSCOPY; SULFUR; VISIBLE RADIATION

Citation Formats

Guenther, Kay-Michael, E-mail: kay-michael.guenther@efzn.de, Gimpel, Thomas, Ruibys, Augustinas, Kontermann, Stefan, Tomm, Jens W., Winter, Stefan, Schade, Wolfgang, and Fraunhofer Heinrich Hertz Institute, Am Stollen 19B, 38640 Goslar. Excess carrier generation in femtosecond-laser processed sulfur doped silicon by means of sub-bandgap illumination. United States: N. p., 2014. Web. doi:10.1063/1.4863439.
Guenther, Kay-Michael, E-mail: kay-michael.guenther@efzn.de, Gimpel, Thomas, Ruibys, Augustinas, Kontermann, Stefan, Tomm, Jens W., Winter, Stefan, Schade, Wolfgang, & Fraunhofer Heinrich Hertz Institute, Am Stollen 19B, 38640 Goslar. Excess carrier generation in femtosecond-laser processed sulfur doped silicon by means of sub-bandgap illumination. United States. doi:10.1063/1.4863439.
Guenther, Kay-Michael, E-mail: kay-michael.guenther@efzn.de, Gimpel, Thomas, Ruibys, Augustinas, Kontermann, Stefan, Tomm, Jens W., Winter, Stefan, Schade, Wolfgang, and Fraunhofer Heinrich Hertz Institute, Am Stollen 19B, 38640 Goslar. Mon . "Excess carrier generation in femtosecond-laser processed sulfur doped silicon by means of sub-bandgap illumination". United States. doi:10.1063/1.4863439.
@article{osti_22280560,
title = {Excess carrier generation in femtosecond-laser processed sulfur doped silicon by means of sub-bandgap illumination},
author = {Guenther, Kay-Michael, E-mail: kay-michael.guenther@efzn.de and Gimpel, Thomas and Ruibys, Augustinas and Kontermann, Stefan and Tomm, Jens W. and Winter, Stefan and Schade, Wolfgang and Fraunhofer Heinrich Hertz Institute, Am Stollen 19B, 38640 Goslar},
abstractNote = {With Fourier-transform photocurrent spectroscopy and spectral response measurements, we show that silicon doped with sulfur by femtosecond laser irradiation generates excess carriers, when illuminated with infrared light above 1100 nm. Three distinct sub-bandgap photocurrent features are observed. Their onset energies are in good agreement with the known sulfur levels S{sup +}, S{sup 0}, and S{sub 2}{sup 0}. The excess carriers are separated by a pn-junction to form a significant photocurrent. Therefore, this material likely demonstrates the impurity band photovoltaic effect.},
doi = {10.1063/1.4863439},
journal = {Applied Physics Letters},
number = 4,
volume = 104,
place = {United States},
year = {Mon Jan 27 00:00:00 EST 2014},
month = {Mon Jan 27 00:00:00 EST 2014}
}