A high carrier injection terahertz quantum cascade laser based on indirectly pumped scheme
- Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Ave. W., Waterloo, Ontario N2L3G1 (Canada)
- National Research Council, Blg. M-50, 1200 Montreal Rd., Ottawa, Ontario K1A0R6 (Canada)
- Department of Electrical Engineering and Computer Science, Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)
A Terahertz quantum cascade laser with a rather high injection coupling strength based on an indirectly pumped scheme is designed and experimentally implemented. To effectively suppress leakage current, the chosen quantum cascade module of the device is based on a five-well GaAs/Al{sub 0.25}Ga{sub 0.75}As structure. The device lases up to 151 K with a lasing frequency of 2.67 THz. This study shows that the effect of higher energy states in carrier transport and the long-range tunnel coupling between states that belong to non-neighbouring modules have to be considered in quantum design of structures with a narrow injector barrier. Moreover, the effect of interface roughness scattering between the lasing states on threshold current is crucial.
- OSTI ID:
- 22280511
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 104; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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