A current modulation in the Gd{sub 2}O{sub 3}/Si/Gd{sub 2}O{sub 3} quantum well structure as a mean to monitor oxygen vacancies
Journal Article
·
· AIP Conference Proceedings
- Department of Physics and Optical Science, UNC-Charlotte, Charlotte, NC 28223 (United States)
- Electrical and Computer Engineering Department, UNC-Charlotte, Charlotte, NC 28223 (United States)
The Gd{sub 2}O{sub 3} layer grown by electron beam evaporation system normally leads to oxygen deficient sites unless the oxygen partial pressure is provided. These oxygen vacancies were monitored through their current modulating effect. This modulation controlled the current within a Si well of the Gd{sub 2}O{sub 3}/Si/Gd{sub 2}O{sub 3} quantum well structure through the migration of the oxygen vacancies. Such behavior were not found in the structure that contains far less oxygen vacancy such as SiO{sub 2}/Si/SiO{sub 2} structure.
- OSTI ID:
- 22280294
- Journal Information:
- AIP Conference Proceedings, Vol. 1598, Issue 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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