Quantum-confinement effects on conduction band structure of rectangular cross-sectional GaAs nanowires

Journal Article · Fri Feb 07 04:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4864490· OSTI ID:22278103

Morioka, N.; Mori, S.; Suda, J.; Kimoto, T. ^[1]

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1. Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)

The conduction band structure and electron effective mass of GaAs nanowires with various cross-sectional shapes and orientations were calculated by two methods, a tight-binding method and an effective mass equation taking the bulk full-band structure into account. The effective mass of nanowires increases as the cross-sectional size decreases, and this increase in effective mass depends on the orientations and substrate faces of nanowires. Among [001], [110], and [111]-oriented rectangular cross-sectional GaAs nanowires, [110]-oriented nanowires with wider width along the [001] direction showed the lightest effective mass. This dependence originates from the anisotropy of the Γ valley of bulk GaAs. The relationship between effective mass and bulk band structure is discussed.

• OSTI ID: 22278103
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ANISOTROPY
BAND THEORY
CRYSTAL STRUCTURE
EFFECTIVE MASS
ELECTRONIC STRUCTURE
ELECTRONS
GALLIUM ARSENIDES
ORIENTATION
QUANTUM WIRES
SUBSTRATES