III-V/Si on silicon-on-insulator platform for hybrid nanoelectronics
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany)
- Maria Curie-Sklodowska University, Pl. M. Curie-Sklodowskiej 1, 20-035 Lublin (Poland)
The unique properties of SOI wafers enable the integration of heterogeneous materials with distinct functionalities in different layers. In particular, III-V compound semiconductors are very attractive for low-noise and high-speed electronic and photonic components integrated on a single chip. We have developed a CMOS compatible and fully integrated solution for the integration of III-V compound semiconductors with silicon technology for optoelectronic applications. InAs compound semiconductor nanostructures are synthesized in SOI wafers using the combined ion beam implantation and millisecond liquid-phase epitaxial growth. Optoelectronic and microstructural investigations carried out on implanted, annealed, and selectively etched samples confirm the formation of high-quality III-V compound semiconductor nanostructures.
- OSTI ID:
- 22278032
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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