Phosphorescence of Ce-doped Gd{sub 3}Al{sub 2}Ga{sub 3}O{sub 12} crystals studied using luminescence spectroscopy
- Department of Physics, Faculty of Science, Yamagata University, 1-4-12 Kojirakawa, Yamagata 990-8560 (Japan)
- New Industry Creation Hatchery Center, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)
Photoluminescence (PL) and thermally stimulated luminescence (TSL) properties of Ce-doped Gd{sub 3}Al{sub 2}Ga{sub 3}O{sub 12} (Ce:GAGG) crystals have been studied in the temperature range of 10–300 K under electron excitation from the 4f level to the 5d levels of Ce{sup 3+} ions. PL and TSL spectra commonly exhibit a prominent band around 2.31 eV, due to electron transitions from the lowest 5d (5d{sub 1}) level to the 4f levels. The intensity of the Ce{sup 3+} PL band is significantly changed with temperature under excitation from the lowest 4f level to a higher-lying 5d (5d{sub 2}) level, whereas it is scarcely changed under excitation from the 4f level to the 5d{sub 1} level. Such change correlates well with the appearance of TSL glow peaks at 84 and 175 K. The luminescence properties are apparently influenced by the thermal behavior of electrons trapped at some lattice site, but not by nonradiative processes of electrons starting from the 5d{sub 1} level. The phosphorescence process will be discussed using a phenomenological model based on the results obtained.
- OSTI ID:
- 22277962
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
CERIUM IONS
CRYSTALS
ELECTRONS
EMISSION SPECTRA
EMISSION SPECTROSCOPY
EXCITATION
GADOLINIUM COMPOUNDS
GALLIUM OXIDES
PHOSPHORESCENCE
PHOTOLUMINESCENCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
THERMOLUMINESCENCE
TRAPPING