Conduction paths in Cu/amorphous-Ta{sub 2}O{sub 5}/Pt atomic switch: First-principles studies
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656 (Japan)
- School of Electrical Engineering, Shandong University, Jinan 250061 (China)
We have examined the structure of Cu filaments in Cu/amorphous-Ta{sub 2}O{sub 5} (a-Ta{sub 2}O{sub 5})/Pt atomic switch from first principles. We have found that the Cu single atomic chains are unstable during the molecular dynamics (MD) simulation and thus cannot work as conduction paths. On the other hand, Cu nanowires with various diameters are stable and can form conductive paths. In this case, the Cu-Cu bonding mainly contributes to the conductive, delocalized defect state. These make a sharp contrast with the case of single Cu chains in crystalline Ta{sub 2}O{sub 5}, which can be conductive paths through the alternant Cu-Ta bonding structure. A series of MD simulations suggest that even Cu nanowires with a diameter of 0.24 nm can work as conduction paths. The calculations of the transport properties of Cu/a-Ta{sub 2}O{sub 5}/Pt heterostructures with Cu nanowires between two electrodes further confirm the conductive nature of the Cu nanowires in the a-Ta{sub 2}O{sub 5}.
- OSTI ID:
- 22275785
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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